X-ray imaging of silicon die within fully packaged semiconductor devices

X-ray diffraction imaging (XRDI) (topography) measurements of silicon die warpage within fully packaged commercial quad-flat no-lead devices are described. Using synchrotron radiation, it has been shown that the tilt lattice planes in Analog Devices AD9253 initially falls, but after 100 °C, rises again. The twist across wafer falls linearly with an increase temperature. At 200 varies approximately position, is, displacement quadratically along die. is reversible on cooling, suggesting a simple paraboloidal form prior to encapsulation; complex and twisting result from polymer setting process. Feasibility studies reported, which demonstrate divergent beam quasi-monochromatic radiation sealed tube can be used perform by XRDI laboratory. Existing tools have limitations because geometry optics, resulting applicability only structures. necessary modifications required for use situations warpage, example, multiple interconnected packages specified.